Disclosed is an apparatus and method for adjusting a memory parameter in a non-volatile memory circuit. On a trigger event, a parameter is determined in accordance with a circuit characteristic associated with the memory block. The parameter may be a new read level voltage to apply to a page of a memory block, or a program verify level voltage used to program a page of a memory block. On determining the parameter a command is sent to the memory circuit to apply the parameter to the page of the memory block. The method can be triggered by an event such as P/E cycle times and the condition is dynamically adjusted to extend the life of the memory circuit.