Invention Grant
- Patent Title: Polygon recovery for VLSI mask correction
- Patent Title (中): 用于VLSI掩模校正的多边形恢复
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Application No.: US13682056Application Date: 2012-11-20
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Publication No.: US08819600B2Publication Date: 2014-08-26
- Inventor: Patrick Droz , Paul Hurley , Rajai Nasser , Joseph Paki
- Applicant: International Business Machines Corporation
- Applicant Address: US NY Armonk
- Assignee: International Business Machines Corporation
- Current Assignee: International Business Machines Corporation
- Current Assignee Address: US NY Armonk
- Agency: Cantor Colburn LLP
- Agent Daniel Morris
- Main IPC: G06F17/50
- IPC: G06F17/50

Abstract:
Embodiments relate to polygon recovery from a +1/−1 description of a plurality of polygons of a very large scale integrated (VLSI) mask for production of a VLSI semiconductor device. An aspect includes receiving a set of data comprising the +1/−1 description of the plurality of polygons of the VLSI mask, the +1/−1 description comprising a plurality of corners. Another aspect includes determining a 4-directional data structure, a Mm value comprising a first limit value, and a Mp value comprising a second limit value for each of the plurality of corners. Another aspect includes recovering the plurality of polygons from the set of data by assigning each of the plurality of corners to a single polygon based on the 4-directional data structure, the Mm value, and the Mp value of each of the plurality of corners, and determining an order of the respective corners of each polygon.
Public/Granted literature
- US20140143739A1 POLYGON RECOVERY FOR VLSI MASK CORRECTION Public/Granted day:2014-05-22
Information query