Invention Grant
- Patent Title: Process for producing an acoustic device having a controlled-bandgap phononic crystal structure
- Patent Title (中): 具有受控带隙声子晶体结构的声学装置的制造方法
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Application No.: US13371192Application Date: 2012-02-10
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Publication No.: US08819904B2Publication Date: 2014-09-02
- Inventor: Marie Gorisse , Alexandre Reinhardt
- Applicant: Marie Gorisse , Alexandre Reinhardt
- Applicant Address: FR Paris
- Assignee: Commissariat a l'Energie Atomique et aux Energies Alternatives
- Current Assignee: Commissariat a l'Energie Atomique et aux Energies Alternatives
- Current Assignee Address: FR Paris
- Agency: Baker & Hostetler LLP
- Priority: FR1151101 20110211
- Main IPC: H01L41/22
- IPC: H01L41/22

Abstract:
A process for producing an acoustic device having a phononic crystal structure comprising inclusions produced in a first medium distributed in a matrix of a second medium, to block propagation of acoustic waves within a bandgap frequency band, includes: defining geometric parameters of said inclusions, which have walls contacting said matrix, making at least one non-zero first wall angle, to the normal of the plane of said structure, said geometric parameters including said first wall angle; determining a function relating to variation in frequency position of said bandgap with said wall angle or relating to variation in width of said bandgap with said wall angle; determining said at least first angle, for a selected frequency position and/or selected width of the bandgap, from the function or functions determined beforehand; and producing said inclusions having at least said first wall angle in said matrix formed by said second medium.
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