Invention Grant
- Patent Title: Substrate processing method and substrate processing apparatus
- Patent Title (中): 基板处理方法和基板处理装置
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Application No.: US13051771Application Date: 2011-03-18
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Publication No.: US08821744B2Publication Date: 2014-09-02
- Inventor: Akio Ui , Hisataka Hayashi
- Applicant: Akio Ui , Hisataka Hayashi
- Applicant Address: JP Tokyo
- Assignee: Kabushiki Kaisha Toshiba
- Current Assignee: Kabushiki Kaisha Toshiba
- Current Assignee Address: JP Tokyo
- Agency: Finnegan, Henderson, Farabow, Garrett & Dunner, L.L.P.
- Priority: JPP2010-223171 20100930
- Main IPC: B44C1/22
- IPC: B44C1/22

Abstract:
A substrate processing method using a substrate processing apparatus includes a first step and a second step. The first step is to apply a negative voltage pulse from a pulsed power supply to be included in the apparatus. The second step is to apply floating potential for an interval of time between the negative voltage pulse and a positive voltage pulse from the pulsed power supply subsequent to the negative voltage pulse. In addition, the apparatus includes a chamber, a first electrode, a second electrode, an RF power supply, and the pulsed power supply. The second electrode is provided so that the second electrode faces the first electrode to hold a substrate. The RF power supply applies an RF voltage having a frequency of 50 MHz or higher to the second electrode. The pulsed power supply repeatedly applies a voltage waveform with the RF voltage to the second electrode.
Public/Granted literature
- US20120080408A1 SUBSTRATE PROCESSING METHOD AND SUBSTRATE PROCESSING APPARATUS Public/Granted day:2012-04-05
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