Invention Grant
- Patent Title: Chemical mechanical planarization composition and method with low corrosiveness
- Patent Title (中): 化学机械平面化组合物和腐蚀性低的方法
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Application No.: US13154662Application Date: 2011-06-07
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Publication No.: US08821751B2Publication Date: 2014-09-02
- Inventor: Xiaobo Shi , Ronald Martin Pearlstein
- Applicant: Xiaobo Shi , Ronald Martin Pearlstein
- Applicant Address: US PA Allentown
- Assignee: Air Products and Chemicals, Inc.
- Current Assignee: Air Products and Chemicals, Inc.
- Current Assignee Address: US PA Allentown
- Agent Lina Yang
- Main IPC: C09K13/02
- IPC: C09K13/02 ; C09K13/06 ; C09K13/08 ; C09K13/04 ; C09K13/00 ; H01L21/302 ; H01L21/461 ; C03C15/00 ; C03C25/68
Abstract:
A CMP composition and associated method are provided that afford good corrosion protection and low defectivity levels both during and subsequent to CMP processing. This composition and method are useful in CMP (chemical mechanical planarization) processing in semiconductor manufacture involving removal of metal(s) and/or barrier layer material(s) and especially for CMP processing in low technology node applications.
Public/Granted literature
- US20120142191A1 Chemical Mechanical Planarization Composition And Method With Low Corrosiveness Public/Granted day:2012-06-07
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