Invention Grant
- Patent Title: Activated silicon precursors for low temperature deposition
- Patent Title (中): 用于低温沉积的活性硅前体
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Application No.: US13609551Application Date: 2012-09-11
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Publication No.: US08821986B2Publication Date: 2014-09-02
- Inventor: Timothy W. Weidman , Todd Schroeder , David Thompson , Jeffrey W. Anthis
- Applicant: Timothy W. Weidman , Todd Schroeder , David Thompson , Jeffrey W. Anthis
- Applicant Address: US CA Santa Clara
- Assignee: Applied Materials, Inc.
- Current Assignee: Applied Materials, Inc.
- Current Assignee Address: US CA Santa Clara
- Agency: Servilla Whitney LLC
- Main IPC: C23C16/50
- IPC: C23C16/50 ; C23C16/34 ; C23C16/505 ; C23C16/36
Abstract:
Provided are processes for the low temperature deposition of silicon-containing films using activated SiH-containing precursors. The SiH-containing precursors may have reactive functionality such as halogen or cyano moieties. Described are processes in which halogenated or cyanated silanes are used to deposit SiN films. Plasma processing conditions can be used to adjust the carbon, hydrogen and/or nitrogen content of the films.
Public/Granted literature
- US20130071580A1 Activated Silicon Precursors For Low Temperature Deposition Public/Granted day:2013-03-21
Information query
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