Invention Grant
- Patent Title: DLC film-forming method and DLC film
- Patent Title (中): DLC成膜法和DLC膜
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Application No.: US13378689Application Date: 2010-06-09
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Publication No.: US08821990B2Publication Date: 2014-09-02
- Inventor: Masahiro Suzuki , Toshiyuki Saito , Kazuyoshi Yamakawa
- Applicant: Masahiro Suzuki , Toshiyuki Saito , Kazuyoshi Yamakawa
- Applicant Address: JP Osaka-shi
- Assignee: JTEKT Corporation
- Current Assignee: JTEKT Corporation
- Current Assignee Address: JP Osaka-shi
- Agency: Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P.
- Priority: JP2009-146732 20090619; JP2009-219190 20090924; JP2010-114438 20100518
- International Application: PCT/JP2010/059774 WO 20100609
- International Announcement: WO2010/147038 WO 20101223
- Main IPC: C23C16/26
- IPC: C23C16/26 ; F16D69/00 ; C23C16/02 ; C23C16/515

Abstract:
The present invention provides a DLC film that has good adhesiveness even in a low-temperature environment, and a DLC film-forming method capable of forming this DLC film. The present invention also provides a DLC film that has excellent initial compatibility, and a DLC film-forming method capable of forming this DLC film. In the present invention, a first opposing surface (31) that faces an inner clutch plate, of a substrate (30) of an outer clutch plate (15) is covered by a DLC film (26). Also, a treatment layer (33) is formed on a surface layer portion of the substrate (30). The treatment layer (33) is formed by applying direct-current pulse voltage to the substrate (30), and generating plasma in an atmosphere that contains argon gas and hydrogen gas.
Public/Granted literature
- US20120094074A1 DLC FILM-FORMING METHOD AND DLC FILM Public/Granted day:2012-04-19
Information query
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