Invention Grant
- Patent Title: Grid refinement method
- Patent Title (中): 网格细化方法
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Application No.: US13754840Application Date: 2013-01-30
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Publication No.: US08822107B2Publication Date: 2014-09-02
- Inventor: Wen-Chuan Wang , Shy-Jay Lin , Pei-Yi Liu , Jaw-Jung Shin , Burn Jeng Lin
- Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Haynes and Boone, LLP
- Main IPC: G03F1/20
- IPC: G03F1/20 ; G03F7/20

Abstract:
The present disclosure provide one embodiment of a method of a lithography process for reducing a critical dimension (CD) by a factor n wherein n
Public/Granted literature
- US20130273475A1 Grid Refinement Method Public/Granted day:2013-10-17
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