Invention Grant
- Patent Title: Pattern forming method, electron beam-sensitive or extreme ultraviolet-sensitive composition, resist film, manufacturing method of electronic device, and electronic device
- Patent Title (中): 图案形成方法，电子束敏感或极紫外敏感组合物，抗蚀膜，电子器件的制造方法和电子器件
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Application No.: US13613437Application Date: 2012-09-13
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Publication No.: US08822129B2Publication Date: 2014-09-02
- Inventor: Kaoru Iwato , Hideaki Tsubaki , Shuji Hirano
- Applicant: Kaoru Iwato , Hideaki Tsubaki , Shuji Hirano
- Applicant Address: JP Tokyo
- Assignee: FUJIFILM Corporation
- Current Assignee: FUJIFILM Corporation
- Current Assignee Address: JP Tokyo
- Agency: Sughrue Mion, PLLC
- Priority: JP2011-218548 20110930
- Main IPC: G03F7/00
- IPC: G03F7/00 ; G03F7/004 ; G03F7/20
Abstract:
There is provided a pattern forming method comprising (1) a step of forming a film by using an electron beam-sensitive or extreme ultraviolet-sensitive resin composition containing (A) a resin that contains a repeating unit having a partial structure represented by the specific formula and can decrease the solubility for a developer containing an organic solvent by the action of an acid, and (B) a compound capable of generating an acid upon irradiation with an electron beam or an extreme ultraviolet ray, (2) a step of exposing the film by using an electron beam or an extreme ultraviolet ray, and (4) a step of developing the exposed film by using an organic solvent-containing developer to form a negative pattern.
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