Invention Grant
US08822134B2 Resist developer, method for forming a resist pattern and method for manufacturing a mold
有权
抗蚀剂显影剂，用于形成抗蚀剂图案的方法和用于制造模具的方法
- Patent Title: Resist developer, method for forming a resist pattern and method for manufacturing a mold
- Patent Title (中): 抗蚀剂显影剂，用于形成抗蚀剂图案的方法和用于制造模具的方法
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Application No.: US13638249Application Date: 2011-03-28
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Publication No.: US08822134B2Publication Date: 2014-09-02
- Inventor: Hiromasa Iyama , Hideo Kobayashi
- Applicant: Hiromasa Iyama , Hideo Kobayashi
- Applicant Address: JP Tokyo
- Assignee: Hoya Corporation
- Current Assignee: Hoya Corporation
- Current Assignee Address: JP Tokyo
- Agency: Sughrue Mion, PLLC
- Priority: JP2010-081394 20100331
- International Application: PCT/JP2011/057530 WO 20110328
- International Announcement: WO2011/125571 WO 20111013
- Main IPC: G03F7/32
- IPC: G03F7/32
Abstract:
The disclosed resist developer is used when developing by irradiating an energy beam onto a resist layer containing a polymer of α-chloromethacrylate and α-methylstyrene for rendering or exposure, and contains a fluorocarbon-containing solvent (A) and an alcohol solvent (B), the latter of which has higher solubility relative to the resist layer than the former.
Public/Granted literature
- US20130078578A1 RESIST DEVELOPER, METHOD FOR FORMING A RESIST PATTERN AND METHOD FOR MANUFACTURING A MOLD Public/Granted day:2013-03-28
Information query
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