A resist pattern-forming method includes applying a radiation-sensitive resin composition on a substrate to form a resist film. The radiation-sensitive resin composition includes an acid-labile group-containing polymer and a photoacid generator. The resist film is exposed. The resist film is developed using a developer including an organic solvent in an amount of no less than 80% by mass to a total amount of the developer. The radiation-sensitive resin composition has a contrast value γ of from 5.0 to 30.0. The contrast value γ is calculated from a resist dissolution contrast curve obtained by changing only a dose of a light used for exposing the resist film.