Invention Grant
- Patent Title: Electronic component with reactive barrier and hermetic passivation layer
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Application No.: US13723327Application Date: 2012-12-21
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Publication No.: US08822235B2Publication Date: 2014-09-02
- Inventor: Marina Zelner , Mircea Capanu , Paul Bun Cheuk Woo , Susan C. Nagy
- Applicant: Research In Motion RF, Inc.
- Applicant Address: CA Waterloo, ON
- Assignee: BlackBerry Limited
- Current Assignee: BlackBerry Limited
- Current Assignee Address: CA Waterloo, ON
- Agency: Guntin & Gust, PLC
- Agent Andrew Gust
- Main IPC: H01L21/00
- IPC: H01L21/00

Abstract:
An electronic component is provided on a substrate. A thin-film capacitor is attached to the substrate, the thin-film capacitor includes a pyrochlore or perovskite dielectric layer between a plurality of electrode layers, the electrode layers being formed from a conductive thin-film material. A reactive barrier layer is deposited over the thin-film capacitor. The reactive barrier layer includes an oxide having an element with more than one valence state, wherein the element with more than one valence state has a molar ratio of the molar amount of the element that is in its highest valence state to its total molar amount in the barrier of 50% to 100%. Optionally layers of other materials may intervene between the capacitor and reactive barrier layer. The reactive barrier layer may be paraelectric and the electronic component may be a tunable capacitor.
Public/Granted literature
- US20130105436A1 Electronic Component with Reactive Barrier and Hermetic Passivation Layer Public/Granted day:2013-05-02
Information query
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