Invention Grant
- Patent Title: Hole first hardmask definition
- Patent Title (中): 孔第一硬掩模定义
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Application No.: US14031979Application Date: 2013-09-19
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Publication No.: US08822237B2Publication Date: 2014-09-02
- Inventor: Wei-Hang Huang , Shih-Chang Liu , Chern-Yow Hsu , Fu-Ting Sung , Chia-Shiung Tsai
- Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Slater and Matsil, L.L.P.
- Main IPC: H01L21/00
- IPC: H01L21/00 ; H01L43/12
Abstract:
A semiconductor device and a method of manufacture are provided, such as a MTJ device and a method of manufacturing a MTJ device. The MTJ device may include a bottom electrode, a MTJ stack, and a top electrode, wherein the top electrode is formed using a hole-filling technique. The top electrode may have slanted sidewalls. The MTJ stack may be formed by depositing corresponding MTJ layers. A patterned mask may be formed and patterned over the MTJ layers to form an opening defining the top electrode. The opening is filled with a conductive material to form the top electrode. The top electrode is then used as a mask to pattern the MTJ layers, thereby forming a MTJ stack.
Public/Granted literature
- US20140024139A1 Hole First Hardmask Definition Public/Granted day:2014-01-23
Information query
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