Invention Grant
- Patent Title: Manufacturing method for semiconductor device
- Patent Title (中): 半导体器件的制造方法
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Application No.: US13896702Application Date: 2013-05-17
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Publication No.: US08822239B2Publication Date: 2014-09-02
- Inventor: Nobuaki Hashimoto
- Applicant: Seiko Epson Corporation
- Applicant Address: JP
- Assignee: Seiko Epson Corporation
- Current Assignee: Seiko Epson Corporation
- Current Assignee Address: JP
- Agency: Harness, Dickey & Pierce, P.L.C.
- Priority: JP2006-065637 20060310
- Main IPC: B41J2/175
- IPC: B41J2/175
Abstract:
A semiconductor device includes: a semiconductor substrate including an active element formation face on which an active element is formed; detection electrodes detecting a remaining amount of ink by being wet in the ink; an antenna transmitting and receiving information; a storage circuit storing information relating to the ink; and a control circuit controlling the detection electrodes, the antenna, and the storage circuit.
Public/Granted literature
- US20130250015A1 SEMICONDUCTOR DEVICE, INK CARTRIDGE, AND ELECTRONIC DEVICE Public/Granted day:2013-09-26
Information query
IPC分类:
