Invention Grant
- Patent Title: Temperature detecting apparatus, substrate processing apparatus and method of manufacturing semiconductor device
- Patent Title (中): 温度检测装置,基板处理装置及半导体装置的制造方法
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Application No.: US13536418Application Date: 2012-06-28
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Publication No.: US08822240B2Publication Date: 2014-09-02
- Inventor: Tetsuya Kosugi , Masaaki Ueno , Hideto Yamaguchi
- Applicant: Tetsuya Kosugi , Masaaki Ueno , Hideto Yamaguchi
- Applicant Address: JP Tokyo
- Assignee: Hitachi Kokusai Electric Inc.
- Current Assignee: Hitachi Kokusai Electric Inc.
- Current Assignee Address: JP Tokyo
- Agency: Oliff PLC
- Priority: JP2011-154941 20110713; JP2012-093663 20120417
- Main IPC: G01R31/26
- IPC: G01R31/26 ; H01L21/66 ; G01K1/12 ; H01L21/67 ; G01K7/04 ; G01K7/02

Abstract:
A temperature detecting apparatus is provided which is capable of suppressing disconnection of a thermocouple wire or positional deviation of a thermocouple junction portion caused by change over time. The temperature detecting apparatus includes: an insulation rod installed to extend in a vertical direction and including a through-hole in vertical direction; a thermocouple wire inserted in the through-hole of the insulation rod, the thermocouple wire including a thermocouple junction portion at an upper end thereof and an angled portion at a lower end of the insulation rod; and a buffer area installed below the insulation rod and configured to suppress a restriction of a horizontal portion of the angled portion upon heat expansion, wherein an upper portion of the thermocouple wire or a middle portion in the vertical direction are supported by the insulation rod.
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