Provided is a method of manufacturing a semiconductor device, which includes the steps of: (a) preparing a processing target including a wafer (21) and a protective member (24) formed on the wafer (21); (b) measuring a thickness of the protective member (24) at a plurality of points; and (c) setting a desired value of a total thickness of the wafer (21) and the protective member (24) based on measurement results at the plurality of points to grind the wafer (21) in accordance with the desired value.