Invention Grant
- Patent Title: Methods for monitoring the amount of metal contamination in a process
- Patent Title (中): 监测过程中金属污染量的方法
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Application No.: US13353142Application Date: 2012-01-18
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Publication No.: US08822242B2Publication Date: 2014-09-02
- Inventor: Jeffrey L. Libbert , Lu Fei
- Applicant: Jeffrey L. Libbert , Lu Fei
- Applicant Address: SG Singapore
- Assignee: Sunedison Semiconductor Limited (UEN201334164H)
- Current Assignee: Sunedison Semiconductor Limited (UEN201334164H)
- Current Assignee Address: SG Singapore
- Agency: Armstrong Teasdale LLP
- Main IPC: H01L21/66
- IPC: H01L21/66 ; H01L21/461
Abstract:
Methods are disclosed for monitoring the amount of metal contamination imparted during wafer processing operations such as polishing and cleaning. The methods include subjecting a silicon-on-insulator structure to the semiconductor process, precipitating metal contamination in the structure and delineating the metal contaminants.
Public/Granted literature
- US20120115258A1 METHODS FOR MONITORING THE AMOUNT OF METAL CONTAMINATION IN A PROCESS Public/Granted day:2012-05-10
Information query
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