Invention Grant
- Patent Title: Semiconductor housing and method for the production of a semiconductor housing
- Patent Title (中): 半导体外壳和半导体外壳的制造方法
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Application No.: US14069920Application Date: 2013-11-01
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Publication No.: US08822253B2Publication Date: 2014-09-02
- Inventor: Tobias Kolleth , Pascal Stumpf , Christian Joos
- Applicant: Micronas GmbH
- Applicant Address: DE Freiburg
- Assignee: Micronas GmbH
- Current Assignee: Micronas GmbH
- Current Assignee Address: DE Freiburg
- Agency: Muncy, Geissler, Olds & Lowe, P.C.
- Priority: DE102011013468 20110309
- Main IPC: H01L21/56
- IPC: H01L21/56 ; H01L23/16 ; H01L23/31 ; H01L23/00
Abstract:
A semiconductor housing is provided that includes a metal support and a semiconductor body, a bottom side thereof being connected to the metal support. The semiconductor body has metal surfaces that are connected to pins by bond wires and a plastic compound, which completely surrounds the bond wires and partially surrounds the semiconductor body. The plastic compound has an opening on the top side of the semiconductor body, and a barrier is formed on the top side of the semiconductor body. The barrier has a top area and a base area spaced from the edges of the semiconductor body and an internal clearance of the barrier determines a size of the opening. Whereby, a portion of the plastic compound has a height greater than the barrier, and a fixing layer is formed between the base area of the barrier and the top side of the semiconductor body.
Public/Granted literature
- US20140057395A1 SEMICONDUCTOR HOUSING AND METHOD FOR THE PRODUCTION OF A SEMICONDUCTOR HOUSING Public/Granted day:2014-02-27
Information query
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