Invention Grant
- Patent Title: Epitaxial growth method of a zinc oxide based semiconductor layer, epitaxial crystal structure, epitaxial crystal growth apparatus, and semiconductor device
- Patent Title (中): 氧化锌基半导体层的外延生长方法，外延晶体结构，外延晶体生长装置和半导体器件
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Application No.: US12493765Application Date: 2009-06-29
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Publication No.: US08822263B2Publication Date: 2014-09-02
- Inventor: Akinori Koukitu , Yoshinao Kumagai , Tetsuo Fujii , Naoki Yoshii
- Applicant: Akinori Koukitu , Yoshinao Kumagai , Tetsuo Fujii , Naoki Yoshii
- Applicant Address: JP Tokyo JP Kyoto JP Tokyo
- Assignee: National University Corporation Tokyo University of Agriculture and Technology,Rohm Co., Ltd.,Tokyo Electron Limited
- Current Assignee: National University Corporation Tokyo University of Agriculture and Technology,Rohm Co., Ltd.,Tokyo Electron Limited
- Current Assignee Address: JP Tokyo JP Kyoto JP Tokyo
- Agency: Rabin & Berdo, P.C.
- Priority: JPP2008-171575 20080630; JPP2008-171610 20080630; JPP2008-334213 20081226; JPP2009-048527 20090302; JPP2009-123102 20090521
- Main IPC: H04L21/00
- IPC: H04L21/00
Abstract:
It is provided a hetero epitaxial growth method, a hetero epitaxial crystal structure, a hetero epitaxial growth apparatus and a semiconductor device, the method includes forming a buffer layer formed with the orienting film of an oxide, or the orienting film of nitride on a heterogeneous substrate; and performing crystal growth of a zinc oxide based semiconductor layer on the buffer layer using a halogenated group II metal and an oxygen material. It is provided a homo epitaxial growth method, a homo epitaxial crystal structure, a homo epitaxial growth apparatus and a semiconductor device, the homo epitaxial growth method includes introducing reactant gas mixing zinc containing gas and oxygen containing gas on a zinc oxide substrate; and performing crystal growth of a zinc oxide based semiconductor layer on the zinc oxide substrate.
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