Invention Grant
- Patent Title: Semiconductor device, manufacturing method thereof, and measuring method thereof
- Patent Title (中): 半导体装置及其制造方法及其测定方法
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Application No.: US11885958Application Date: 2006-03-17
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Publication No.: US08822272B2Publication Date: 2014-09-02
- Inventor: Takuya Tsurume , Etsuko Asano
- Applicant: Takuya Tsurume , Etsuko Asano
- Applicant Address: JP Atsugi-shi, Kanagawa-ken
- Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee Address: JP Atsugi-shi, Kanagawa-ken
- Agency: Robinson Intellectual Property Law Office, P.C.
- Agent Eric J. Robinson
- Priority: JP2005-093295 20050328
- International Application: PCT/JP2006/005889 WO 20060317
- International Announcement: WO2006/104019 WO 20061005
- Main IPC: H01L29/36
- IPC: H01L29/36

Abstract:
To provide a semiconductor device capable of being easily subjected to a physical test without deteriorating characteristics. According to a measuring method of a semiconductor device in which an element layer provided with a test element including a terminal portion is sealed with first and second films having flexibility, the first film formed over the terminal portion is removed to form a contact hole reaching the terminal portion; the contact hole is filled with a resin containing a conductive material; heating is carried out after arranging a wiring substrate having flexibility over the resin with which filling has been performed so that the terminal portion and the wiring substrate having flexibility are electrically connected via the resin containing a conductive material; and a measurement is performed.
Public/Granted literature
- US20080277660A1 Semiconductor Device, Manufacturing Method Thereof, and Measuring Method Thereof Public/Granted day:2008-11-13
Information query
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