Invention Grant
- Patent Title: Thin film transistor display panel and manufacturing method thereof
- Patent Title (中): 薄膜晶体管显示面板及其制造方法
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Application No.: US14036668Application Date: 2013-09-25
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Publication No.: US08822279B2Publication Date: 2014-09-02
- Inventor: Hyung-Jun Kim , Chang-Oh Jeong , Jae-Hong Kim
- Applicant: Samsung Display Co., Ltd.
- Applicant Address: KR Yongin
- Assignee: Samsung Display Co., Ltd.
- Current Assignee: Samsung Display Co., Ltd.
- Current Assignee Address: KR Yongin
- Agency: H.C. Park & Associates, PLC
- Priority: KR10-2010-0079991 20100818
- Main IPC: H01L21/84
- IPC: H01L21/84

Abstract:
A thin film transistor display panel includes a substrate, a gate wire on the substrate and including a gate line and a gate electrode; a gate insulating layer on the gate wire; a semiconductor layer on the gate insulating layer; a data wire including a source electrode on the semiconductor layer, a drain electrode opposing the source electrode with respect to the gate electrode, and a data line; a passivation layer on the data wire having a contact hole exposing the drain electrode; and a pixel electrode on the passivation layer and connected to the drain electrode through the contact hole. The gate wire has a first region and second region where the gate line and the gate electrode are positioned, respectively. The thickness of the gate wire in the first region is greater than the thickness of the gate wire in the second region.
Public/Granted literature
- US20140024157A1 THIN FILM TRANSISTOR DISPLAY PANEL AND MANUFACTURING METHOD THEREOF Public/Granted day:2014-01-23
Information query
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