Invention Grant
US08822288B2 NAND memory device containing nanodots and method of making thereof
有权
包含纳米点的NAND存储器件及其制造方法
- Patent Title: NAND memory device containing nanodots and method of making thereof
- Patent Title (中): 包含纳米点的NAND存储器件及其制造方法
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Application No.: US13708587Application Date: 2012-12-07
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Publication No.: US08822288B2Publication Date: 2014-09-02
- Inventor: Vinod Purayath , George Samachisa , George Matamis , James Kai , Yuan Zhang
- Applicant: SanDisk Technologies, Inc.
- Applicant Address: US TX Plano
- Assignee: Sandisk Technologies Inc.
- Current Assignee: Sandisk Technologies Inc.
- Current Assignee Address: US TX Plano
- Agency: The Marbury Law Group PLLC
- Main IPC: H01L29/788
- IPC: H01L29/788 ; H01L29/792 ; H01L21/331 ; H01L29/66 ; H01L27/115 ; H01L29/423
Abstract:
A method of fabricating a memory device includes providing multiple coatings of nanodots on a tunnel dielectric layer to form a floating gate layer having a high nanodot density. The memory device may have a nanodot-containing floating gate layer with a density greater than 4×1012 dots/cm2. Further methods include forming an oxidation barrier layer, such as a silicon nitride shell, over a surface of the nanodots, and depositing a dielectric material over the nanodots to form a floating gate layer.
Public/Granted literature
- US20140001533A1 NAND Memory Device Containing Nanodots and Method of Making Thereof Public/Granted day:2014-01-02
Information query
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