Invention Grant
- Patent Title: Low extension dose implants in SRAM fabrication
- Patent Title (中): SRAM制造中的低延伸剂量植入物
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Application No.: US13438437Application Date: 2012-04-03
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Publication No.: US08822295B2Publication Date: 2014-09-02
- Inventor: Leland Chang , Chung-Hsun Lin , Shih-Hsien Lo , Jeffrey W. Sleight
- Applicant: Leland Chang , Chung-Hsun Lin , Shih-Hsien Lo , Jeffrey W. Sleight
- Applicant Address: US NY Armonk
- Assignee: International Business Machines Corporation
- Current Assignee: International Business Machines Corporation
- Current Assignee Address: US NY Armonk
- Agency: Cantor Colburn LLP
- Agent Vazken Alexanian
- Main IPC: H01L29/78
- IPC: H01L29/78
Abstract:
A static random access memory fabrication method includes forming a gate stack on a substrate, forming isolating spacers adjacent the gate stack, the isolating spacers and gate stack having a gate length, forming a source and drain region adjacent the gate stack, which generates an effective gate length, wherein the source and drain regions are formed from a low extension dose implant that varies a difference between the gate length and the effective gate length.
Public/Granted literature
- US20130260525A1 LOW EXTENSION DOSE IMPLANTS IN SRAM FABRICATION Public/Granted day:2013-10-03
Information query
IPC分类:
