Methods of forming a storage node in a semiconductor device are provided. The method includes forming an interlayer insulation layer on a substrate, forming an etch stop layer and a first sacrificial layer on the interlayer insulation layer, patterning the first sacrificial layer and the etch stop layer to form a first sacrificial layer pattern and an etch stop layer pattern that define a storage node contact hole, forming a recessed first storage node conductive pattern that conformally covers a lower sidewall and a bottom surface of the storage node contact hole, forming a second storage node conductive pattern that includes a first portion surrounded by the recessed first storage node conductive pattern and a second portion conformally covering an upper sidewall of the storage node contact hole, and removing the first sacrificial layer pattern. The recessed first storage node conductive pattern and the second storage node conductive pattern constitute a storage node.