Invention Grant
- Patent Title: Substrate provided with semiconductor films and manufacturing method thereof
- Patent Title (中): 具有半导体膜的基板及其制造方法
-
Application No.: US12211945Application Date: 2008-09-17
-
Publication No.: US08822305B2Publication Date: 2014-09-02
- Inventor: Shunpei Yamazaki
- Applicant: Shunpei Yamazaki
- Applicant Address: JP Atsugi-shi, Kanagawa-ken
- Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee Address: JP Atsugi-shi, Kanagawa-ken
- Agency: Robinson Intellectual Property Law Office, P.C.
- Agent Eric J. Robinson
- Priority: JP2007-245898 20070921; JP2007-245904 20070921
- Main IPC: H01L21/30
- IPC: H01L21/30
Abstract:
A plurality of single crystal semiconductor substrates having a rectangular shape are disposed on a tray. Depression portions are provided in the tray so that the single crystal semiconductor substrates can fit in. The single crystal semiconductor substrates disposed on the tray are doped with hydrogen ions, so that damaged regions are formed at a desired depth. A bonding layer is formed on surfaces of the single crystal semiconductor substrates. The plurality of single crystal semiconductor substrates in each of which the damaged region is formed and on which the bonding layer is formed are disposed on the tray and bonded to the base substrate. By heat treatment, the single crystal semiconductor substrates are separated at the damaged regions; accordingly, a plurality of single crystal semiconductor layers which are thinned are formed over the base substrate.
Public/Granted literature
- US20090079025A1 SUBSTRATE PROVIDED WITH SEMICONDUCTOR FILMS AND MANUFACTURING METHOD THEREOF Public/Granted day:2009-03-26
Information query
IPC分类:
