Invention Grant
- Patent Title: Method of fabricating a GaN P-i-N diode using implantation
- Patent Title (中): 使用注入制造GaN P-i-N二极管的方法
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Application No.: US13335329Application Date: 2011-12-22
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Publication No.: US08822311B2Publication Date: 2014-09-02
- Inventor: Isik C. Kizilyalli , Hui Nie , Andrew P. Edwards , Richard J. Brown , Donald R. Disney
- Applicant: Isik C. Kizilyalli , Hui Nie , Andrew P. Edwards , Richard J. Brown , Donald R. Disney
- Applicant Address: US CA San Jose
- Assignee: Avogy, Inc.
- Current Assignee: Avogy, Inc.
- Current Assignee Address: US CA San Jose
- Agency: Kilpatrick Townsend & Stockton LLP
- Main IPC: H01L29/20
- IPC: H01L29/20 ; H01L29/24
Abstract:
A III-nitride semiconductor device includes an active region for supporting current flow during forward-biased operation of the III-nitride semiconductor device. The active region includes a first III-nitride epitaxial material having a first conductivity type, and a second III-nitride epitaxial material having a second conductivity type. The III-nitride semiconductor device further includes an edge-termination region physically adjacent to the active region and including an implanted region comprising a portion of the first III-nitride epitaxial material. The implanted region of the first III-nitride epitaxial material has a reduced electrical conductivity in relation to portions of the first III-nitride epitaxial material adjacent to the implanted region.
Public/Granted literature
- US20130161780A1 METHOD OF FABRICATING A GAN P-I-N DIODE USING IMPLANTATION Public/Granted day:2013-06-27
Information query
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