Invention Grant
- Patent Title: Method of growing epitaxial layers on a substrate
- Patent Title (中): 在衬底上生长外延层的方法
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Application No.: US13523670Application Date: 2012-06-14
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Publication No.: US08822314B2Publication Date: 2014-09-02
- Inventor: Christopher L. Chua , Mark R. Teepe , Thomas Wunderer , Zhihong Yang , Noble M. Johnson , Clifford Knollenberg
- Applicant: Christopher L. Chua , Mark R. Teepe , Thomas Wunderer , Zhihong Yang , Noble M. Johnson , Clifford Knollenberg
- Applicant Address: US CA Palo Alto
- Assignee: Palo Alto Research Center Incorporated
- Current Assignee: Palo Alto Research Center Incorporated
- Current Assignee Address: US CA Palo Alto
- Agency: Hollingsworth Davis, LLC
- Main IPC: H01L21/20
- IPC: H01L21/20 ; H01L21/322 ; H01L21/02
Abstract:
An epitaxial growth method includes plasma treating a surface of a bulk crystalline Aluminum Nitride (AlN) substrate and subsequently heating the substrate in an ammonia-rich ambient to a temperature of above 1000° C. for at least 5 minutes without epitaxial growth. After heating the surface, a III-nitride layer is epitaxially grown on the surface.
Public/Granted literature
- US20140011345A1 METHOD OF GROWING EPITAXIAL LAYERS ON A SUBSTRATE Public/Granted day:2014-01-09
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