Invention Grant
US08822316B2 Method for manufacturing semiconductor device including an inverted region formed by doping second conductive type impurities into diffusion region of a first conductive type
有权
一种制造半导体器件的方法，该半导体器件包括通过将第二导电类型杂质掺杂到第一导电类型的扩散区域而形成的反向区域
- Patent Title: Method for manufacturing semiconductor device including an inverted region formed by doping second conductive type impurities into diffusion region of a first conductive type
- Patent Title (中): 一种制造半导体器件的方法，该半导体器件包括通过将第二导电类型杂质掺杂到第一导电类型的扩散区域而形成的反向区域
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Application No.: US13791333Application Date: 2013-03-08
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Publication No.: US08822316B2Publication Date: 2014-09-02
- Inventor: Atsuya Masada , Mitsuo Horie
- Applicant: Panasonic Corporation
- Applicant Address: JP Osaka
- Assignee: Panasonic Corporation
- Current Assignee: Panasonic Corporation
- Current Assignee Address: JP Osaka
- Agency: McDermott Will & Emery LLP
- Priority: JP2009-086976 20090331; JP2009-086977 20090331
- Main IPC: H01L29/866
- IPC: H01L29/866 ; H01L21/027 ; H01L29/66 ; H01L21/22 ; H01L29/06 ; H01L29/40
Abstract:
A semiconductor device including a semiconductor substrate having a first conductive type layer; a first diffusion region which has the first conductive type and is formed in the first conductive type layer; a second diffusion region which has a second conductive type and an area larger than an area of the first diffusion region and overlaps the first diffusion region; and a PN junction formed at an interface between the first and the second diffusion regions. The second diffusion region includes a ring shaped structure or a guard ring includes an inverted region which has the second conductive type. According to such a configuration, it is possible to provide a semiconductor device having the required Zener characteristics with good controllability.
Public/Granted literature
- US20130189832A1 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF Public/Granted day:2013-07-25
Information query
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