Invention Grant
- Patent Title: Dense finFET SRAM
- Patent Title (中): 密集finFET SRAM
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Application No.: US13681761Application Date: 2012-11-20
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Publication No.: US08822320B2Publication Date: 2014-09-02
- Inventor: Kangguo Cheng , Bruce B. Doris , Ali Khakifirooz , Ghavam G. Shahidi
- Applicant: International Business Machines Corporation
- Applicant Address: US NY Armonk
- Assignee: International Business Machines Corporation
- Current Assignee: International Business Machines Corporation
- Current Assignee Address: US NY Armonk
- Agency: Tutunjian & Bitetto, P.C.
- Agent Vazken Alexanian
- Main IPC: H01L29/78
- IPC: H01L29/78 ; H01L29/66
Abstract:
A method for fabricating the device includes patterning a first structure and a second structure on a semiconductor device. A first angled ion implantation is applied to the second structure such that the first structure is protected and a second angled ion implantation is applied to the first structure such that the second structure is protected, wherein exposed portions of the first and second structures have an altered rate of oxidation. Oxidation is performed to form thicker or thinner oxide portions on the exposed portions of the first and second structures relative to unexposed portions of the first and second structures. Oxide portions are removed to an underlying layer of the first and second structures. The first and second structures are removed. Spacers are formed about a periphery of remaining oxide portions. The remaining oxide portions are removed. A layer below the spacers is patterned to form integrated circuit features.
Public/Granted literature
- US20140138797A1 DENSE FINFET SRAM Public/Granted day:2014-05-22
Information query
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