Invention Grant
- Patent Title: Semiconductor element, method of manufacturing semiconductor element, multi-layer printed circuit board, and method of manufacturing multi-layer printed circuit board
- Patent Title (中): 半导体元件，半导体元件的制造方法，多层印刷电路板以及多层印刷电路板的制造方法
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Application No.: US12698622Application Date: 2010-02-02
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Publication No.: US08822323B2Publication Date: 2014-09-02
- Inventor: Hajime Sakamoto , Dongdong Wang
- Applicant: Hajime Sakamoto , Dongdong Wang
- Applicant Address: JP Ogaki-shi
- Assignee: Ibiden Co., Ltd.
- Current Assignee: Ibiden Co., Ltd.
- Current Assignee Address: JP Ogaki-shi
- Agency: Oblon Spivak, McClelland, Maier & Neustadt, L.L.P.
- Priority: JP2000-290231 20000925; JP2000-290232 20000925; JP2000-382806 20001215; JP2000-382807 20001215; JP2000-382813 20001215; JP2000-382814 20001215
- Main IPC: H01L21/44
- IPC: H01L21/44
Abstract:
A method of manufacturing a semiconductor device having a transition layer, including (a) forming a wiring and a die pad on a wafer, (b) forming a thin film layer on an entire surface of the wafer obtained in the step (a), (c) forming a resist layer on the thin film layer, and forming a thickening layer on a resist layer unformed section, (d) peeling the resist layer, (e) removing the thin film layer by etching, and (f) dividing the wafer to thereby form semiconductor devices.
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