Invention Grant
- Patent Title: Passivated copper chip pads
- Patent Title (中): 钝化铜芯片
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Application No.: US13854321Application Date: 2013-04-01
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Publication No.: US08822324B2Publication Date: 2014-09-02
- Inventor: Thomas Goebel , Erdem Kaltalioglu , Markus Naujok
- Applicant: Infineon Technologies AG
- Applicant Address: DE Neubiberg
- Assignee: Infineon Technologies AG
- Current Assignee: Infineon Technologies AG
- Current Assignee Address: DE Neubiberg
- Agency: Slater & Matsil, L.L.P.
- Main IPC: H01L21/44
- IPC: H01L21/44 ; H01L21/768 ; H01L23/00

Abstract:
A structure and method of forming passivated copper chip pads is described. In various embodiments, the invention describes a substrate that includes active circuitry and metal levels disposed above the substrate. A passivation layer is disposed above a last level of the metal levels. A conductive liner is disposed in the sidewalls of an opening disposed in the passivation layer, wherein the conductive liner is also disposed over an exposed surface of the last level of the metal levels.
Public/Granted literature
- US20130224946A1 Passivated Copper Chip Pads Public/Granted day:2013-08-29
Information query
IPC分类: