Invention Grant
- Patent Title: Method for manufacturing Sn alloy bump
- Patent Title (中): 制造Sn合金凸块的方法
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Application No.: US13981862Application Date: 2012-01-16
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Publication No.: US08822326B2Publication Date: 2014-09-02
- Inventor: Takeshi Hatta , Akihiro Masuda
- Applicant: Takeshi Hatta , Akihiro Masuda
- Applicant Address: JP Tokyo
- Assignee: Mitsubishi Materials Corporation
- Current Assignee: Mitsubishi Materials Corporation
- Current Assignee Address: JP Tokyo
- Agency: Edwards Wildman Palmer LLP
- Agent Jeffrey D. Hsi
- Priority: JP2011-013661 20110126
- International Application: PCT/JP2012/000217 WO 20120116
- International Announcement: WO2012/101975 WO 20120802
- Main IPC: H01L21/44
- IPC: H01L21/44
Abstract:
Provided is a method for manufacturing an Sn alloy bump, wherein composition of the Sn alloy bump can be readily controlled. The method for manufacturing an Sn alloy bump formed of an alloy composed of Sn and other one or more types of metals has a step of forming an Sn layer on an electrode pad in a resist opening formed on a substrate by electrolytic plating; a step of laminating Sn and an alloy layer on the Sn layer by electrolytic plating; and a step of forming an Sn alloy bump by melting the Sn layer and the laminated alloy layer after removal of a resist.
Public/Granted literature
- US20130309862A1 METHOD FOR MANUFACTURING Sn ALLOY BUMP Public/Granted day:2013-11-21
Information query
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