Invention Grant
- Patent Title: Method for making conductive interconnects
- Patent Title (中): 制造导电互连的方法
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Application No.: US12567950Application Date: 2009-09-28
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Publication No.: US08822329B2Publication Date: 2014-09-02
- Inventor: Rainer Leuschner , Gunther Mackh , Uwe Seidel
- Applicant: Rainer Leuschner , Gunther Mackh , Uwe Seidel
- Applicant Address: DE Neubiberg
- Assignee: Infineon Technologies AG
- Current Assignee: Infineon Technologies AG
- Current Assignee Address: DE Neubiberg
- Agency: Infineon Technologies AG
- Main IPC: H01L23/535
- IPC: H01L23/535 ; H01L21/768 ; H01L23/522
Abstract:
One or more embodiments relate to a method for making a semiconductor structure, the method including: forming a first conductive interconnect at least partially through the substrate; and forming a second conductive interconnect over the substrate, wherein the first conductive interconnect and the second conductive interconnect are formed at least partially simultaneously.
Public/Granted literature
- US20110073997A1 Semiconductor Structure and Method for Making Same Public/Granted day:2011-03-31
Information query
IPC分类:
