Invention Grant
- Patent Title: Anchored damascene structures
- Patent Title (中): 锚定镶嵌结构
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Application No.: US13038580Application Date: 2011-03-02
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Publication No.: US08822331B2Publication Date: 2014-09-02
- Inventor: David Lu , Horng-Huei Tseng , Syun-Ming Jang
- Applicant: David Lu , Horng-Huei Tseng , Syun-Ming Jang
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Co. Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Co. Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Tung & Associates
- Main IPC: H01L21/4763
- IPC: H01L21/4763 ; H01L21/768 ; H01L23/522 ; H01L23/532

Abstract:
An anchored conductive damascene buried in a multi-density dielectric layer and method for forming the same, the anchored conductive damascene including a dielectric layer with an opening extending through a thickness of the dielectric layer; wherein the dielectric layer comprises at least one relatively higher density portion and a relatively lower density portion, the relatively lower density portion forming a contiguous major portion of the dielectric layer; and, wherein the opening in the relatively lower density portion has a lateral dimension relatively larger compared to the relatively higher density portion to form anchoring steps.
Public/Granted literature
- US20120142188A1 ANCHORED DAMASCENE STRUCTURES Public/Granted day:2012-06-07
Information query
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