Invention Grant
- Patent Title: Slurry composition for CMP, and polishing method
- Patent Title (中): 用于CMP的浆料组合物和抛光方法
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Application No.: US13502062Application Date: 2010-10-13
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Publication No.: US08822339B2Publication Date: 2014-09-02
- Inventor: Dong-Mok Shin , Eun-Mi Choi , Seung-Beom Cho
- Applicant: Dong-Mok Shin , Eun-Mi Choi , Seung-Beom Cho
- Applicant Address: KR Seoul
- Assignee: LG Chem, Ltd.
- Current Assignee: LG Chem, Ltd.
- Current Assignee Address: KR Seoul
- Agency: Rothwell, Figg, Ernst & Manbeck, P.C.
- Priority: KR10-2009-0097048 20091013
- International Application: PCT/KR2010/007006 WO 20101013
- International Announcement: WO2011/049318 WO 20110428
- Main IPC: H01L21/461
- IPC: H01L21/461

Abstract:
The present invention relates to a CMP slurry composition comprising an abrasive particle; a dispersant; an ionic polymer additive; and a non-ionic polymer additive including a polyolefin-polyethylene glycol copolymer including at least two polyethylene glycol repeat unit as a backbone and at least a polyethylene glycol repeating unit as a side chain, and a polishing method with using the slurry composition. The CMP slurry composition shows a low polishing rate to a single-crystalline silicon layer or a polysilicon layer and a high polishing rate to a silicon oxide layer, resulting in having an excellent polishing selectivity.
Public/Granted literature
- US20120270399A1 SLURRY COMPOSITION FOR CMP, AND POLISHING METHOD Public/Granted day:2012-10-25
Information query
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