Invention Grant
- Patent Title: Wet soluble lithography
- Patent Title (中): 湿溶性光刻
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Application No.: US12430614Application Date: 2009-04-27
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Publication No.: US08822347B2Publication Date: 2014-09-02
- Inventor: Chien-Wei Wang , Ching-Yu Chang
- Applicant: Chien-Wei Wang , Ching-Yu Chang
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Haynes and Boone, LLP
- Main IPC: H01L21/302
- IPC: H01L21/302 ; H01L21/461
Abstract:
A system to form a wet soluble lithography layer on a semiconductor substrate includes providing the substrate, depositing a first layer comprising a first material on the substrate, and depositing a second layer comprising a second material on the substrate. In an embodiment, the first material comprises a different composition than the second material and one of the first layer and the second layer includes silicon.
Public/Granted literature
- US20100273321A1 WET SOLUBLE LITHOGRAPHY Public/Granted day:2010-10-28
Information query
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