Invention Grant
- Patent Title: Photoelectric conversion device, method for manufacturing the same, photo sensor and imaging device
- Patent Title (中): 光电转换装置，其制造方法，光传感器和成像装置
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Application No.: US13638000Application Date: 2011-03-24
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Publication No.: US08822808B2Publication Date: 2014-09-02
- Inventor: Mitsumasa Hamano
- Applicant: Mitsumasa Hamano
- Applicant Address: JP Tokyo
- Assignee: FUJIFILM Corporation
- Current Assignee: FUJIFILM Corporation
- Current Assignee Address: JP Tokyo
- Agency: Sughrue Mion, PLLC
- Priority: JP2010-084406 20100331; JP2010-291376 20101227
- International Application: PCT/JP2011/057251 WO 20110324
- International Announcement: WO2011/125527 WO 20111013
- Main IPC: H01L25/00
- IPC: H01L25/00
Abstract:
Provided are a photoelectric conversion device capable of controlling an absorbance of the red region at a wavelength of 600 nm or more, and an imaging device having an improved color reproduction by using the photoelectric device. Provided are a photoelectric conversion device that includes a pair of electrodes, and a photoelectric conversion layer disposed between the pair of electrodes, in which the photoelectric conversion layer contains a p-type semiconductor compound and two or more different kinds of unsubstituted fullerenes, and an imaging device that includes the photoelectric conversion device.
Public/Granted literature
- US20130015547A1 PHOTOELECTRIC CONVERSION DEVICE, METHOD FOR MANUFACTURING THE SAME, PHOTO SENSOR AND IMAGING DEVICE Public/Granted day:2013-01-17
Information query
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