Invention Grant
- Patent Title: Image sensors employing sensitized semiconductor diodes
- Patent Title (中): 使用敏化半导体二极管的图像传感器
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Application No.: US13051320Application Date: 2011-03-18
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Publication No.: US08822897B2Publication Date: 2014-09-02
- Inventor: Hui Tian , Igor Constantin Ivanov , Edward Hartley Sargent
- Applicant: Hui Tian , Igor Constantin Ivanov , Edward Hartley Sargent
- Applicant Address: US CA Menlo Park
- Assignee: InVisage Technologies, Inc.
- Current Assignee: InVisage Technologies, Inc.
- Current Assignee Address: US CA Menlo Park
- Agency: Schwegman Lundberg & Woessner, P.A.
- Main IPC: H01L27/148
- IPC: H01L27/148 ; H01L31/0232 ; H01L27/146 ; H04N9/04

Abstract:
In various example embodiments, the inventive subject matter is an image sensor and methods of formation of image sensors. In an embodiment, the image sensor comprises a semiconductor substrate and a plurality of pixel regions. Each of the pixel regions includes an optically sensitive material over the substrate with the optically sensitive material positioned to receive light. A pixel circuit for each pixel region is also included in the sensor. Each pixel circuit comprises a charge store formed on the semiconductor substrate and a read out circuit. A non-metallic contact region is between the charge store and the optically sensitive material of the respective pixel region, the charge store being in electrical communication with the optically sensitive material of the respective pixel region through the non-metallic contact region.
Public/Granted literature
- US20110226934A1 IMAGE SENSORS EMPLOYING SENSITIZED SEMICONDUCTOR DIODES Public/Granted day:2011-09-22
Information query
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