Invention Grant
- Patent Title: Nonvolatile memory device and method for manufacturing same
- Patent Title (中): 非易失性存储器件及其制造方法
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Application No.: US13600719Application Date: 2012-08-31
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Publication No.: US08822968B2Publication Date: 2014-09-02
- Inventor: Hideki Inokuma
- Applicant: Hideki Inokuma
- Applicant Address: JP Tokyo
- Assignee: Kabushiki Kaisha Toshiba
- Current Assignee: Kabushiki Kaisha Toshiba
- Current Assignee Address: JP Tokyo
- Agency: Finnegan, Henderson, Farabow, Garrett & Dunner, L.L.P.
- Priority: JP2012-070408 20120326
- Main IPC: H01L29/02
- IPC: H01L29/02
Abstract:
According to one embodiment, a nonvolatile memory device includes a first wiring layer. The device includes a second wiring layer intersecting with the first wiring layer. And the device includes a first memory layer provided at a position where the first wiring layer and the second wiring layer intersect. And the first memory layer contacts with the first wiring layer, and the first wiring layer is a layer which is capable of supplying a metal ion to the first memory layer.
Public/Granted literature
- US20130248796A1 NONVOLATILE MEMORY DEVICE AND METHOD FOR MANUFACTURING SAME Public/Granted day:2013-09-26
Information query
IPC分类:
