Invention Grant
- Patent Title: P-type organic semiconductor/fullerene photoelectric conversion layer
- Patent Title (中): P型有机半导体/富勒烯光电转换层
-
Application No.: US12254624Application Date: 2008-10-20
-
Publication No.: US08822980B2Publication Date: 2014-09-02
- Inventor: Masayuki Hayashi , Yoshiki Maehara
- Applicant: Masayuki Hayashi , Yoshiki Maehara
- Applicant Address: JP Tokyo
- Assignee: FUJIFILM Corporation
- Current Assignee: FUJIFILM Corporation
- Current Assignee Address: JP Tokyo
- Agency: Sughrue Mion, PLLC
- Priority: JP2007-271667 20071018
- Main IPC: H01L51/00
- IPC: H01L51/00 ; H01L27/146

Abstract:
A photoelectric conversion element is provided and includes a photoelectric conversion portion which includes: a pair of electrodes including an electron-collecting electrode and a hole-collecting electrode; and a photoelectric conversion layer between the pair of electrodes. At least part of the photoelectric conversion layer includes a mixture layer of a p-type organic semiconductor and a fullerene, and a volume ratio of the fullerene to the p-type organic semiconductor in the photoelectric conversion layer is such that the volume ratio on a side of the electron-collecting electrode is smaller than the volume ratio on a side of the hole-collecting electrode.
Public/Granted literature
- US20090101953A1 PHOTOELECTRIC CONVERSION ELEMENT AND SOLID-STATE IMAGING DEVICE Public/Granted day:2009-04-23
Information query
IPC分类: