Invention Grant
- Patent Title: Thin-film transistor (TFT) with a bi-layer channel
- Patent Title (中): 具有双层通道的薄膜晶体管（TFT）
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Application No.: US13255137Application Date: 2009-03-31
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Publication No.: US08822988B2Publication Date: 2014-09-02
- Inventor: Vincent C. Korthuis , Randy Hoffman
- Applicant: Vincent C. Korthuis , Randy Hoffman
- Applicant Address: US TX Houston
- Assignee: Hewlett-Packard Development Company, L.P.
- Current Assignee: Hewlett-Packard Development Company, L.P.
- Current Assignee Address: US TX Houston
- International Application: PCT/US2009/039026 WO 20090331
- International Announcement: WO2010/114529 WO 20101007
- Main IPC: H01L29/786
- IPC: H01L29/786
Abstract:
In at least some embodiments, a thin-film transistor (TFT) includes a gate electrode and a gate dielectric covering the gate dielectric. The TFT also includes a source electrode and a drain electrode adjacent the gate dielectric. The TFT also includes a bi-layer channel between the source electrode and the drain electrode, the bi-layer channel having a zinc indium oxide (ZIO) layer positioned adjacent the gate dielectric and a zinc tin oxide (ZTO) layer that covers the ZIO layer.
Public/Granted literature
- US20120012840A1 Thin-film Transistor (TFT) With A Bi-layer Channel Public/Granted day:2012-01-19
Information query
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