Invention Grant
US08823013B2 Second Schottky contact metal layer to improve GaN schottky diode performance
有权
第二肖特基接触金属层，以提高GaN肖特基二极管的性能
- Patent Title: Second Schottky contact metal layer to improve GaN schottky diode performance
- Patent Title (中): 第二肖特基接触金属层，以提高GaN肖特基二极管的性能
-
Application No.: US14105057Application Date: 2013-12-12
-
Publication No.: US08823013B2Publication Date: 2014-09-02
- Inventor: Ting Gang Zhu , Marek Pabisz
- Applicant: Power Integrations, Inc.
- Applicant Address: US CA San Jose
- Assignee: Power Integrations, Inc.
- Current Assignee: Power Integrations, Inc.
- Current Assignee Address: US CA San Jose
- Agency: The Law Offices of Bradley J. Bereznak
- Main IPC: H01L29/872
- IPC: H01L29/872 ; H01L29/778 ; H01L29/47 ; H01L21/285 ; H01L29/66 ; H01L29/20
Abstract:
A Schottky contact is disposed atop the surface of the semiconductor. A first Schottky contact metal layer is disposed atop a first portion of the semiconductor surface. A second Schottky contact metal is disposed atop a second portion of the surface layer and joins the first Schottky contact metal layer. A first. Schottky contact metal layer has a lower work function than the second Schottky contact metal layer.
Public/Granted literature
- US20140110721A1 Second Schottky Contact Metal Layer to Improve GaN Schottky Diode Performance Public/Granted day:2014-04-24
Information query
IPC分类:
