An electrode layer lies on a silicon carbide substrate in contact therewith and has Ni atoms and Si atoms. The number of Ni atoms is not less than 67% of the total number of Ni atoms and Si atoms. A side of the electrode layer at least in contact with the silicon carbide substrate contains a compound of Si and Ni. On a surface side of the electrode layer, C atom concentration is lower than Ni atom concentration. Thus, improvement in electrical conductivity of the electrode layer and suppression of precipitation of C atoms at the surface of the electrode layer can both be achieved.