Invention Grant
- Patent Title: Semiconductor module including a switching element formed of a wide bandgap semiconductor
- Patent Title (中): 半导体模块包括由宽带隙半导体形成的开关元件
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Application No.: US13600910Application Date: 2012-08-31
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Publication No.: US08823018B2Publication Date: 2014-09-02
- Inventor: Rei Yoneyama , Hiroyuki Okabe , Takahiro Inoue , Shinji Sakai
- Applicant: Rei Yoneyama , Hiroyuki Okabe , Takahiro Inoue , Shinji Sakai
- Applicant Address: JP Tokyo
- Assignee: Mitsubishi Electric Corporation
- Current Assignee: Mitsubishi Electric Corporation
- Current Assignee Address: JP Tokyo
- Agency: Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P.
- Priority: JP2011-280836 20111222
- Main IPC: H01L29/15
- IPC: H01L29/15 ; H01L31/0312 ; H01L29/16 ; H01L29/66 ; H01L29/78
Abstract:
Provided is a semiconductor module having high inrush-current tolerance. A semiconductor module includes a switching element formed of a wide bandgap semiconductor, and a free wheel diode connected in antiparallel with the switching element, wherein the free wheel diode is made of silicon and has negative temperature characteristics.
Public/Granted literature
- US20130161644A1 SEMICONDUCTOR MODULE Public/Granted day:2013-06-27
Information query
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