Invention Grant
- Patent Title: Nitride semiconductor ultraviolet light-emitting device
- Patent Title (中): 氮化物半导体紫外线发光元件
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Application No.: US13688335Application Date: 2012-11-29
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Publication No.: US08823033B2Publication Date: 2014-09-02
- Inventor: Shuichiro Yamamoto , Shuichi Hirukawa , Masataka Ohta
- Applicant: Shuichiro Yamamoto , Shuichi Hirukawa , Masataka Ohta
- Applicant Address: JP Osaka
- Assignee: Sharp Kabushiki Kaisha
- Current Assignee: Sharp Kabushiki Kaisha
- Current Assignee Address: JP Osaka
- Agency: Harness, Dickey & Pierce, P.L.C.
- Priority: JP2011-267762 20111207
- Main IPC: H01L33/00
- IPC: H01L33/00
Abstract:
A nitride semiconductor ultraviolet light-emitting device includes at least one first conductivity-type nitride semiconductor layer, a nitride semiconductor emission layer, at least one second conductivity-type nitride semiconductor layer and a transparent conductive film of crystallized Mgx1Zn1-x1O (0
Public/Granted literature
- US20130146916A1 NITRIDE SEMICONDUCTOR ULTRAVIOLET LIGHT-EMITTING DEVICE Public/Granted day:2013-06-13
Information query
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