Invention Grant
- Patent Title: Semiconductor light emitting device including first conductive type clad layer
- Patent Title (中): 半导体发光器件包括第一导电型覆层
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Application No.: US12353273Application Date: 2009-01-14
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Publication No.: US08823047B2Publication Date: 2014-09-02
- Inventor: Sang Hoon Han
- Applicant: Sang Hoon Han
- Applicant Address: KR Seoul
- Assignee: LG Innotek Co., Ltd.
- Current Assignee: LG Innotek Co., Ltd.
- Current Assignee Address: KR Seoul
- Agency: Birch, Stewart, Kolasch & Birch, LLP
- Priority: KR10-2008-0004516 20080115
- Main IPC: H01L33/00
- IPC: H01L33/00 ; H01L33/02 ; H01L33/12 ; H01L33/32
Abstract:
Provided is a semiconductor light emitting device. The semiconductor light emitting device comprises a first conductive type clad layer having a composition ratio of aluminum increased at a predetermined rate, an active layer on the first conductive type clad layer, and a second conductive type semiconductor layer on the active layer.
Public/Granted literature
- US20090179221A1 SEMICONDUCTOR LIGHT EMITTING DEVICE Public/Granted day:2009-07-16
Information query
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