Invention Grant
- Patent Title: Light-emitting diode with current-spreading region
- Patent Title (中): 具有电流扩展区域的发光二极管
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Application No.: US13793198Application Date: 2013-03-11
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Publication No.: US08823049B2Publication Date: 2014-09-02
- Inventor: Ding-Yuan Chen , Chen-Hua Yu , Wen-Chih Chiou
- Applicant: Taiwan Semiconductor Manufacturing Company Ltd.
- Applicant Address: TW Hsin-Chu
- Assignee: TSMC Solid State Lighting Ltd.
- Current Assignee: TSMC Solid State Lighting Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Haynes and Boone, LLP
- Main IPC: H01L33/00
- IPC: H01L33/00

Abstract:
A light-emitting diode (LED) device is provided. The LED device has a lower LED layer and an upper LED layer with a light-emitting layer interposed therebetween. A current blocking layer is formed in the upper LED layer such that current passing between an electrode contacting the upper LED layer flows around the current blocking layer. When the current blocking layer is positioned between the electrode and the light-emitting layer, the light emitted by the light-emitting layer is not blocked by the electrode and the light efficiency is increased. The current blocking layer may be formed by converting a portion of the upper LED layer into a resistive region. In an embodiment, ions such as magnesium, carbon, or silicon are implanted into the upper LED layer to form the current blocking layer.
Public/Granted literature
- US20130264539A1 Light-Emitting Diode with Current-Spreading Region Public/Granted day:2013-10-10
Information query
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