Invention Grant
US08823051B2 High-voltage diodes formed in advanced power integrated circuit devices
有权
高压二极管形成于先进的功率集成电路器件中
- Patent Title: High-voltage diodes formed in advanced power integrated circuit devices
- Patent Title (中): 高压二极管形成于先进的功率集成电路器件中
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Application No.: US11434545Application Date: 2006-05-15
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Publication No.: US08823051B2Publication Date: 2014-09-02
- Inventor: Jun Cai , Micheal Harley-Stead , Jim G. Holt
- Applicant: Jun Cai , Micheal Harley-Stead , Jim G. Holt
- Applicant Address: US CA San Jose
- Assignee: Fairchild Semiconductor Corporation
- Current Assignee: Fairchild Semiconductor Corporation
- Current Assignee Address: US CA San Jose
- Agency: Christensen O'Connor Johnson Kindness PLLC
- Main IPC: H01L29/66
- IPC: H01L29/66
Abstract:
A diode-connected lateral transistor on a substrate of a first conductivity type includes a vertical parasitic transistor through which a parasitic substrate leakage current flows. Means for shunting at least a portion of the flow of parasitic substrate leakage current away from the vertical parasitic transistor is provided.
Public/Granted literature
- US20070018250A1 High-voltage diodes formed in advanced power integrated circuit devices Public/Granted day:2007-01-25
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