Invention Grant
- Patent Title: Semiconductor device including a plurality of first flat plates containing a material that absorbs an electromagnetic wave at a high frequency
- Patent Title (中): 半导体装置包括多个第一平板，其包含以高频率吸收电磁波的材料
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Application No.: US13780771Application Date: 2013-02-28
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Publication No.: US08823053B2Publication Date: 2014-09-02
- Inventor: Yoko Sakiyama , Kohei Morizuka
- Applicant: Kabushiki Kaisha Toshiba
- Applicant Address: JP Tokyo
- Assignee: Kabushiki Kaisha Toshiba
- Current Assignee: Kabushiki Kaisha Toshiba
- Current Assignee Address: JP Tokyo
- Agency: Holtz, Holtz Goodman & Chick
- Priority: JP2012-206800 20120920
- Main IPC: H01L29/66
- IPC: H01L29/66 ; H01L29/739 ; H01L27/12
Abstract:
The semiconductor device includes a plurality of first flat plates containing a material that absorbs an electromagnetic wave at a high frequency. Any of the first flat plates is disposed above the first connecting wire, and any other of the first flat plates is disposed above the second connecting wire.
Public/Granted literature
- US20140077260A1 SEMICONDUCTOR DEVICE Public/Granted day:2014-03-20
Information query
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