Invention Grant
- Patent Title: Floating gate type nonvolatile memory device and related methods of manufacture and operation
- Patent Title (中): 浮门式非易失性存储器件及相关制造和操作方法
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Application No.: US13074219Application Date: 2011-03-29
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Publication No.: US08823072B2Publication Date: 2014-09-02
- Inventor: Jae Ho Kim , Sung-Hwan Jang , Hye-Young Kwon , Sunil Shim , Hyun-Sil Oh
- Applicant: Jae Ho Kim , Sung-Hwan Jang , Hye-Young Kwon , Sunil Shim , Hyun-Sil Oh
- Applicant Address: KR Suwon-si, Gyeonggi-do
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Suwon-si, Gyeonggi-do
- Agency: Volentine & Whitt, PLLC
- Priority: KR10-2010-0034766 20100415; KR10-2010-0106212 20101028
- Main IPC: H01L29/788
- IPC: H01L29/788 ; H01L27/115 ; H01L29/423
Abstract:
A floating gate type nonvolatile memory device comprises a semiconductor layer, wordlines crossing over the semiconductor layer, and a memory element disposed between the wordlines and facing the semiconductor layer.
Public/Granted literature
- US20110254069A1 FLOATING GATE TYPE NONVOLATILE MEMORY DEVICE AND RELATED METHODS OF MANUFACTURE AND OPERATION Public/Granted day:2011-10-20
Information query
IPC分类:
